SMCTSM
Sociedad Mexicana de Ciencia y Tecnología
de Superficies y Materiales A.C.

Principal ARXPS Workshop
 
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ARXPS Workshop > Description
Description

47th IUVSTA Workshop on Angle-Resolved XPS:

The Current Status and Future Prospects for Angle-resolved XPS
of Nano and Subnano Films

Riviera Maya, Mexico, March 26 to 30, 2007

Abstract Submission Deadline: March 16, 2007

Invited Speakers

  • Dr. Richard Brundle (C R Brundle & Assoc)
  • Dr. Peter Cumpson (National Physical Laboratory, UK)
  • Dr. Charles S. Fadley (UC Davis, USA)
  • Dr. Julia E. Fulghum (The University of New Mexico, USA)
  • Dr. Keisuke Kobayashi (Spring-8, Japan)
  • Dr. László Kövér (Hungarian Academy of Sciences)
  • Dr. Hiroshi Nohira ( Musashi Institute of Technology, Japan)
  • Dr. Robert Opila (University of Delaware)
  • Dr. Royston Paynter (INRS-Énergie, Matériaux et Télécommunications)
  • Dr. Robert M. Wallace (University of Texas at Dallas)
  • Dr. Wolfgang S. M. Werner (Institut für Allgemeine Physik)
  • Dr. John Wolstenholme (Thermo Electron Corporation)

The new generations of dielectrics in MOS devices, the protective nanofilms on high density recording surfaces, lubricant layers etc., has made nanofilms a topic of great interest to industry. Angle Resolved X-Ray Photoelectron Spectroscopy (ARXPS) can provide detailed chemical as well as depth profile information about the films. The goal of this Workshop will be to find better ways to perform the experiments and, very important, better ways to extract the information from the experimental data.

We will have sessions devoted to ARXPS basics, numerical analysis and applications. A more detailed description is below. The registration will open in August 2006.

Best Regards,

Organizing Committee

Alberto Herrera-Gomez (CINVESTAV, Mexico and UT-Dallas, USA)
John T. Grant (University of Dayton, USA)
Monika Jenko (Institute of Metals and Technology, Slovenia)
Peter Cumpson (National Physical Laboratory, UK)

Local Committee

Martín Yáñez (CINVESTAV, Mexico)
Mario Humberto Farías Sánchez (CCMC-UNAM)
Wilfrido Calleja (INAOE, Mexico)
Juan Luis Peña (Cinvestav, Mexico)


Topics

1. Basics and examination of the present limits of ARXPS

1.1. The current realm of ARXPS
Overall review of the way people see ARXPS, and what has been accomplished.

a) Point of view of people in industry trying to use ARXPS
b) Is ARXPS the tool of choice in academia?

1.2. Theory of ARXPS and the intrinsic uncertainties
The basic theory of the internal processes involved in XPS, and the intrinsic uncertainties.

a) Accounting for all the processes involved in XPS
b) Intrinsic uncertainties

1.3. Data acquisition and experimental equipment

a) How data should be acquired in an instrument and how much data is required.
b) Instrumental requirements for high quality ARXPS spectra.
c) Equipment and statistical point of view.

2. Analysis of ARXPS data

2.1. Data processing methods
How the data can be processed to provide the required information (J1c) and what needs to be done with current data packages to provide optimal processing of data (J4). Uncertainty of the results vs quality of the data (P3b).

a) Data alignment, background, peak discrimination, etc.
b) Multi file fitting.

2.2. Modeling of the angular dependence of the peak intensities

a) The effect of internal scattering on the proving depth as a function of angle
b) Extraction of the depth profile from the angular dependence of the peak intensities
Limits of the information that ARXPS can provide. Uncertainty of the results versus quality of the data.
c) Revision of the current methods for depth profile composition.
Maximum entropy, data inversion and other models.

3. Applications of ARXPS
Review of the systems where ARXPS has a unique selling point and where it is advantageous to employ it in conjunction with other techniques, such as background analysis, EELS, infrared spectrometry, ion scattering, EXAFS, etc.

3.1. High-k dielectrics

a) High-k 1
b) High-k 2

3.2. Oxide layers

3.3. Lubricant layers

3.4. Complex organics and Biomaterials

3.5. Ordered systems

a) Self-assembled monolayers.
b) Crystalline substrates, ordered growth.
c) submonolayer coverage.
d) nanostructures.

3.6. Roughness and island formation

3.7. Interfaces

4. Future development of ARXPS

4.1. ARXPS as a in-line metrology technique
Requirements of ARXPS to be employed as a metrology technique in production lines.

4.2. Required improvements in software
What needs to be done with current data packages to provide optimal processing of data.

4.3. Other areas of application


Please write us if you have any question
(aherrera@utdallas.edu, ARXPSWorkshop@smcsyv.org.mx)

© Todos los Derechos Reservados. Este sitio es propiedad intelectual de la SMCTSM A. C. México 2006